copyright@ semipower electronic technology co., ltd. all rights reserved. jan. 2013. rev. 2.0 1 /5 samwin features high ruggedness r ds( on ) (max 2.5 ? )@v gs =10v gate charge (typical 34 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4.0 * a continuous drain current (@t c =100 o c) 2.2 * a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 342 mj e ar repetitive avalanche energy (note 1) 32 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 270 w derating factor above 25 o c 2.16 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 0.46 o c /w r thja thermal resistance, junction to ambient 80 o c /w bv dss : 600v i d : 4.0a r ds(on) : 2.5ohm 1 2 3 1. gate 2. drain 3. source 1 2 3 ipak SW226NV SW226NV item sales type marking package packaging 1 sw i 226nv SW226NV ipak tube 2 sw d 226nv SW226NV dpak reel order codes dpak 1 2 3 *. drain current is limited by junction temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. jan. 2013. rev. 2.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.65 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 2.0a 2.0 2.5 ? g fs forward transconductance vds =40 v, id = 2 a 3 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 571 740 pf c oss output capacitance 70 90 c rss reverse transfer capacitance 18 24 t d(on) turn on delay time v ds =300v, i d =4.0a, r g =25? (note 4 5 ) 11 30 ns tr rising time 27 60 t d(off) turn off delay time 86 200 t f fall time 34 80 q g total gate charge v ds =480v, v gs =10v, i d =4.0a, i (note 4 5 ) 27 60 nc q gs gate - source charge 3.2 - q gd gate - drain charge 14 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 4 a i sm pulsed source current - - 16 a v sd diode forward voltage drop. i s =4.0a, v gs =0v - - 1.5 v t rr reverse recovery time i s =4.0a, v gs =0v, di f /dt=100a/us - 338 - ns q rr reverse recovery charge - 2.62 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 42mh, i as = 4.0a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4.0a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW226NV SW226NV
copyright@ semipower electronic technology co., ltd. all rights reserved. jan. 2013. rev. 2.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=10v vgs=20v fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature 150 25 0 2 4 6 8 10 12 0 5 10 15 20 25 30 vgs , gate source voltage(v) qg, total gate charge (nc) 0 0.5 1 1.5 2 2.5 3 - 70 - 45 - 20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperature 0.8 0.9 1 1.1 1.2 - 70 - 45 - 20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temper a ture vds=480v SW226NV SW226NV
copyright@ semipower electronic technology co., ltd. all rights reserved. jan. 2013. rev. 2.0 4 /5 samwin fig. 7. maximum safe operating area (to - 251) fig. 8. transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9. gate charge test circuit & waveform fig. 10. switching time test circuit & waveform v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge nc 10v SW226NV SW226NV
copyright@ semipower electronic technology co., ltd. all rights reserved. jan. 2013. rev. 2.0 5 /5 samwin fig. 11. unclamped inductive switching test circuit & waveform fig. 12. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v v gs gs (driver) (driver) i i s s (dut) (dut) v v ds ds (dut) (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd SW226NV SW226NV
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